Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1612-C15 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1612-C15 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SA1612 ■ Features ● High DC Current Gain ● Complementary to 2SC4180 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA,IB=0 -120 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -5 Collector-base cut-off current ICBO VCB= -120 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1 mA -0.09 -0.3 Base - emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1 mA -1.2 Base - emitter voltage VBE VCE= -6V, IC= -1mA -0.55 -0.61 -0.65 hFE(1) VCE= -6V, IC= -0.1mA (Note.1) 100 500 hFE(2) VCE= -6V, IC= -1mA 135 500 900 Collector output capacitance Cob VCB= -30V,IE=0, f=1MHz 2 3 pF Transition frequency fT VCE= -6V, IC= -1mA 50 90 MHz V uA V DC current gain ■ Classification of hfe(2) Type 2SA1612-C15 2SA1612-C16 2SA1612-C17 2SA1612-C18 Range 135-270 200-400 300-600 450-900 Marking C15 C16 C17 C18 1.Base 2.Emitter 3.Collector |
Ähnliche Teilenummer - 2SA1612-C15 |
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Ähnliche Beschreibung - 2SA1612-C15 |
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