BC817-16 datasheet(1/2 Pages) KEXIN

Teilenummer	BC817-16

Bauteilbeschribung	NPN Transistors

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

NPN Transistors

BC817 (KC817)

■

Features

●

For general AF applications

●

Low collector-emitter saturation voltage

●

Complementary types: BC807 (PNP)

-

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

50

Collector - Emitter Voltage

VCEO

45

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

0.5

A

Collector Power Dissipation

PC

0.3

W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

50

Collector- emitter breakdown voltage

VCEO

Ic= 10 mA， IB= 0

45

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 45 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 4V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=500 mA, IB=50mA

0.7

Base - emitter saturation voltage

VBE(sat) IC= 500 mA, IB= 50mA

1.2

Base - emitter voltage

VBE

VCE= 1V, IC= 500mA

1.2

hFE(1)

VCE= 1V, IC= 100mA

100

630

hFE(2)

VCE= 1V, IC= 500mA

40

Collector output capacitance

Cob

VCB= 10V, f=1MHz

10

pF

Transition frequency

fT

VCE= 5V, IC= 10mA,f=100MHz

100

MHz

DC current gain

V

uA

V

■

Classification of hfe(1)

Type

BC817-16

BC817-25

BC817-40

Range

100-250

160-400

250-630

Marking

6A

6B

6C

0.4 +0.1

-0.1

2.9 +0.1

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.1

1.Base

2.Emitter

3.collector

1

2

3

Unit: mm

SOT-23

0.1 +0.05

-0.01

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