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KZT1151 Datenblatt(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer KZT1151
Bauteilbeschribung  PNP Transistors
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KZT1151 Datenblatt(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
2
Transistors
PNP Transistors
FZT1151A (KZT1151A)
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-45
Collector- emitter breakdown voltage
VCES
Ic= -100 uA, IB=0
-45
Collector- emitter breakdown voltage
VCEO
Ic= -10 mA, IB=0
-40
Collector- emitter breakdown voltage
VCEV
IC=-100u A, VEB=1V
-40
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -36 V , IE=0
-100
Collector-emitter cut-off current
ICES
VCE= -32 V , IB=0
-100
Emitter cut-off current
IEBO
VEB= -4V , IC=0
-100
IC=-100mA, IB=-10mA
(Note.1)
-90
IC=-0.5 A, IB=-3mA
(Note.1)
-180
IC=-1 A, IB= -20mA
(Note.1)
-220
IC=-1.8 A, IB= -70mA
(Note.1)
-260
IC=-3 A, IB=-250mA
(Note.1)
-300
Base - emitter saturation voltage
VBE(sat) IC=-3 A, IB=-250mA
(Note.1)
-1.1
Base-Emitter Turn-On Voltage
VBE(on) VCE= -2V, IC= -3A (Note.1)
-1
hFE(1)
VCE= -2V, IC= -10mA
270
hFE(2)
VCE= -2V, IC= -500mA
250
800
hFE(3)
VCE= -2V, IC= -2 A
180
hFE(4)
VCE= -2V, IC= -3 A
100
hFE(5)
VCE= -2V, IC= -5 A
45
ton
IC=-2A, IB=-20mA,VCC=-30V
170
toff
IC=-2A, IB=±20mA,VCC=-30V
460
Collector output capacitance
Cob
VCB= -10V, f=1MHz
40
pF
Transition frequency
fT
VCE= -10V, IC= -50mA,f=50MHz
145
MHz
Switching Times
ns
Collector-emitter saturation voltage
VCE(sat)
DC current gain
(Note.1)
V
mV
V
nA
Note.1: Pulse width=300us. Duty cycle ≤ 2%
Typical Characterisitics
100µs
Pulse Width
Transient Thermal Resistance
0
D=0.2
D=0.1
D=0.05
D=0.5
Single Pulse
D=t1
tP
t1
tP
1ms
10ms 100ms
1s
10s
100s
Derating curve
0
0
T - Ambient Temperature (°C)
D = 1
10
20
30
40
50
20
40
60
80
100
120
140
160
1
2
3
4


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