Datenblatt-Suchmaschine für elektronische Bauteile |
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KZT1151 Datenblatt(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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KZT1151 Datenblatt(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 3 page SMD Type www.kexin.com.cn 2 Transistors PNP Transistors FZT1151A (KZT1151A) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -45 Collector- emitter breakdown voltage VCES Ic= -100 uA, IB=0 -45 Collector- emitter breakdown voltage VCEO Ic= -10 mA, IB=0 -40 Collector- emitter breakdown voltage VCEV IC=-100u A, VEB=1V -40 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -5 Collector-base cut-off current ICBO VCB= -36 V , IE=0 -100 Collector-emitter cut-off current ICES VCE= -32 V , IB=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 IC=-100mA, IB=-10mA (Note.1) -90 IC=-0.5 A, IB=-3mA (Note.1) -180 IC=-1 A, IB= -20mA (Note.1) -220 IC=-1.8 A, IB= -70mA (Note.1) -260 IC=-3 A, IB=-250mA (Note.1) -300 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-250mA (Note.1) -1.1 Base-Emitter Turn-On Voltage VBE(on) VCE= -2V, IC= -3A (Note.1) -1 hFE(1) VCE= -2V, IC= -10mA 270 hFE(2) VCE= -2V, IC= -500mA 250 800 hFE(3) VCE= -2V, IC= -2 A 180 hFE(4) VCE= -2V, IC= -3 A 100 hFE(5) VCE= -2V, IC= -5 A 45 ton IC=-2A, IB=-20mA,VCC=-30V 170 toff IC=-2A, IB=±20mA,VCC=-30V 460 Collector output capacitance Cob VCB= -10V, f=1MHz 40 pF Transition frequency fT VCE= -10V, IC= -50mA,f=50MHz 145 MHz Switching Times ns Collector-emitter saturation voltage VCE(sat) DC current gain (Note.1) V mV V nA Note.1: Pulse width=300us. Duty cycle ≤ 2% ■ Typical Characterisitics 100µs Pulse Width Transient Thermal Resistance 0 D=0.2 D=0.1 D=0.05 D=0.5 Single Pulse D=t1 tP t1 tP 1ms 10ms 100ms 1s 10s 100s Derating curve 0 0 T - Ambient Temperature (°C) D = 1 10 20 30 40 50 20 40 60 80 100 120 140 160 1 2 3 4 |
Ähnliche Teilenummer - KZT1151 |
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Ähnliche Beschreibung - KZT1151 |
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