KTD1304-3_15 datasheet(1/2 Pages) KEXIN

Teilenummer	KTD1304-3

Bauteilbeschribung	NPN Transistors

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

■

Features

●

High Emitter-Base Voltage :VEBO = 12V(Min)

●

High Reverse hFE

●

Low on Resistance

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

25

Collector - Emitter Voltage

VCEO

20

Emitter - Base Voltage

VEBO

12

Collector Current - Continuous

IC

300

Base Current

IB

30

Collector Power Dissipation

PC

200

mW

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

mA

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

25

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

20

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

12

Collector-base cut-off current

ICBO

VCB=25 V , IE= 0

100

Emitter cut-off current

IEBO

VEB= 12V , IC=0

100

Collector-emitter saturation voltage

VCE(sat) IC=100 mA, IB=10mA

0.25

Base - emitter saturation voltage

VBE(sat) IC=100 mA, IB=10mA

1

hFE(1)

VCE= 2V, IC= 4mA (FOR)

200

800

hFE(2)

VCE= 2V, IC= 4mA (REV)

20

On resistance

Ron

IB=1mA,Vin=0.3V,f=1KHz

0.6

Ω

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

10

pF

Transition frequency

fT

VCE= 10V, IC= 1mA

60

MHz

DC current gain

V

nA

■

Marking

J3Y

NPN Transistors

KTD1304 (KTD1304S)

0.4 +0.1

-0.1

2.9 +0.2

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.2

1

2

3

Unit: mm

SOT-23-3

1. Base

2. Emitter

3. Collector

0.15 +0.02

-0.02

Ähnliche Beschreibung - KTD1304-3_15

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KTD1304-3 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

KTD1304-3 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Ähnliche Teilenummer - KTD1304-3_15

Ähnliche Beschreibung - KTD1304-3_15

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