Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB09P04DJ3 Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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MTB09P04DJ3 Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C877J3 Issued Date : 2014.12.25 Revised Date : 2014.12.26 Page No. : 1/9 MTB09P04DJ3 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTB09P04DJ3 Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package Symbol Outline Ordering Information Device Package Shipping MTB09P04DJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel TO-252(DPAK) MTB09P04DJ3 G:Gate D:Drain S:Source BVDSS -40V ID@VGS=-10V, TC=25°C -50A ID@VGS=-10V, TA=25°C -13.7A RDS(ON)@VGS=-10V, ID=-25A 5.2mΩ(typ) RDS(ON)@VGS=-4.5V, ID=-15A 6.9mΩ(typ) G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name |
Ähnliche Teilenummer - MTB09P04DJ3 |
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Ähnliche Beschreibung - MTB09P04DJ3 |
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