Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB080N15J3 Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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MTB080N15J3 Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C987J3 Issued Date : 2015.02.03 Revised Date : Page No. : 1/9 MTB080N15J3 CYStek Product Specification N -Channel Enhancement Mode Power MOSFET MTB080N15J3 BVDSS 150V ID @VGS=10V, TC=25°C 18A RDS(ON)@VGS=10V, ID=10A 82.3mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 85.8mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline Ordering Information Device Package Shipping MTB080N15J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel MTB080N15J3 TO-252(DPAK) G D S G:Gate D:Drain S:Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name |
Ähnliche Teilenummer - MTB080N15J3 |
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Ähnliche Beschreibung - MTB080N15J3 |
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