Datenblatt-Suchmaschine für elektronische Bauteile |
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24502BVA Datenblatt(PDF) 3 Page - Intersil Corporation |
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24502BVA Datenblatt(HTML) 3 Page - Intersil Corporation |
3 / 7 page 6-3 Absolute Maximum Ratings Thermal Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Operating Conditions Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Ranges: HM-6514S-9, HM-6514B-9, HM-6514-9 . . . . . . . . -40oC to +85oC HM-6514B-8, HM-6514-8 . . . . . . . . . . . . . . . . . . -55oC to +125oC Thermal Resistance (Typical) θJA θJC CERDIP Package . . . . . . . . . . . . . . . . 75oC/W 15oC/W PDIP Package . . . . . . . . . . . . . . . . . . . 75oC/W N/A CLCC Package . . . . . . . . . . . . . . . . . . 90oC/W 33oC/W Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC Maximum Junction Temperature Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC Die Characteristics Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6910 Gates CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. DC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-6514S-9, HM-6514B-9, HM-6514-9) TA = -55 oC to +125oC (HM-6514B-8, HM-6514-8) SYMBOL PARAMETER LIMITS UNITS TEST CONDITIONS MIN MAX ICCSB Standby Supply Current HM-6514-9 - 25 µA IO = 0mA, E = VCC -0.3V, VCC = 5.5V HM-6514-8 - 50 µA ICCOP Operating Supply Current (Note 1) - 7 mA E = 1MHz, IO = 0mA, VI = GND, VCC = 5.5V ICCDR Data Retention Supply Current HM-6514-9 - 15 µA IO = 0mA, VCC = 2.0V, E = VCC HM-6514-8 - 25 µA VCCDR Data Retention Supply Voltage 2.0 - V II Input Leakage Current -1.0 +1.0 µA VI = VCC or GND, VCC = 5.5V IIOZ Input/Output Leakage Current -1.0 +1.0 µA VIO = VCC or GND, VCC = 5.5V VIL Input Low Voltage -0.3 0.8 V VCC = 4.5V VIH Input High Voltage VCC -2.0 VCC +0.3 V VCC = 5.5V VOL Output Low Voltage - 0.4 V IO = 2.0mA, VCC = 4.5V VOH1 Output High Voltage 2.4 - V IO = -1.0mA, VCC = 4.5V VOH2 Output High Voltage (Note 2) VCC -0.4 - V IO = -100 µA, VCC = 4.5V Capacitance TA = +25oC SYMBOL PARAMETER MAX UNITS TEST CONDITIONS CI Input Capacitance (Note 2) 8 pF f = 1MHz, All measurements are referenced to device GND CIO Input/Output Capacitance (Note 2) 10 pF NOTES: 1. Typical derating 5mA/MHz increase in ICCOP. 2. Tested at initial design and after major design changes. HM-6514 |
Ähnliche Teilenummer - 24502BVA |
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Ähnliche Beschreibung - 24502BVA |
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