2SJ181S_15 datasheet(2/4 Pages) KEXIN

Teilenummer	2SJ181S

Bauteilbeschribung	P-Channel MOSFET

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

P-Channel MOSFET

2SJ181S

■

Typical Characterisitics

40

30

20

10

0

50

100

150

200

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V

(V)

DS

Maximum Safe Operation Area

–10 –20

–50 –100 –200

–500 –1000

–10

–3

–1

–0.3

–0.1

–0.03

–0.01

Operation in

this area is

limited by RDS(on)

Ta = 25 °C

10 µs

DC

Operation

(Tc

= 25

°C)

1 ms

100

µs

PW

= 10

ms

(1shot)

–1.0

–0.8

–0.6

–0.4

–0.2

0

Drain to Source Voltage V

(V)

DS

Typical Output Characteristics

–10

–20

–30

–40

–50

–10 V

–5 V

Pulse Test

V

= –4 V

GS

–4.5 V

–6 V

–0.5

–0.4

–0.3

–0.2

–0.1

0

Gate to Source Voltage V

(V)

GS

Typical Transfer Characteristics

–2

–4

–6

–8

–10

Tc = –25 °C

75 °C

25 °C

V

= –20 V

Pulse Test

DS

–20

–16

–12

–8

–4

0

–4

–8

12

–16

–20

Gate to Source Voltage V

(V)

GS

Pulse Test

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–0.1 A

–0.2 A

D

I = –0.5 A

0

–10

–20

–30

-40

–50

Drain to Source Voltage V

(V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Ciss

Coss

Crss

V

= 0

f = 1 MHz

GS

1000

300

100

30

10

3

1

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