2SJ212_15 datasheet(1/4 Pages) KEXIN

Teilenummer	2SJ212

Bauteilbeschribung	P-Channel MOSFET

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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1

MOSFET

P-Channel MOSFET

2SJ212

■

Features

●

VDS (V) =-60V

●

ID =-500m A

●

RDS(ON) ＜ 3Ω (VGS =-10V)

●

RDS(ON) ＜ 4Ω (VGS =-4V)

1.70 0.1

0.42 0.1

0.46 0.1

1.Gate

2.Drain

3.Source

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-60

Gate-Source Voltage

VGS

±

20

Continuous Drain Current

ID

-0.5

Pulsed Drain Current (Note.1)

IDM

-1

Power Dissipation

PD

2

W

Junction Temperature

TJ

150

Junction Storage Temperature Range

Tstg

-55 to 150

V

A

℃

Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-60

V

Zero Gate Voltage Drain Current

IDSS

VDS=-60V, VGS=0V

-10

uA

Gate-Body leakage current

IGSS

VDS=0V, VGS=±20V

±

10

uA

Gate Cut off Voltage

VGS(off)

VDS=-10V,ID=-1mA

-1

-3

V

VGS=-4V, ID=-0.3A

4

VGS=-10V, ID=-0.5A

3

Forward Transconductance

gFS

VDS=-5V, ID=-0.5A

0.4

0.54

S

Input Capacitance

Ciss

160

Output Capacitance

Coss

100

Reverse Transfer Capacitance

Crss

25

Turn-On DelayTime

td(on)

130

Turn-On Rise Time

tr

380

Turn-Off DelayTime

td(off)

95

Turn-Off Fall Time

tf

140

pF

Static Drain-Source On-Resistance

RDS(On)

Ω

VGS(on)=-4V, VDS=-5V, ID=-0.3A,

RL=1.5Ω,RGEN=10Ω

ns

VGS=0V, VDS=-5V, f=1MHz

■

Marking

PO

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