Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2618RDTL-E Datenblatt(PDF) 1 Page - Renesas Technology Corp |
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2SC2618RDTL-E Datenblatt(HTML) 1 Page - Renesas Technology Corp |
1 / 6 page R07DS0273EJ0400 Rev.4.00 Page 1 of 5 Jan 10, 2014 Preliminary Datasheet 2SC2618 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1121 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C R07DS0273EJ0400 Rev.4.00 Jan 10, 2014 |
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Ähnliche Beschreibung - 2SC2618RDTL-E |
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