IRF450 datasheet(2/7 Pages) INTERSIL

Teilenummer	IRF450

Bauteilbeschribung	13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

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2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRF450

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

500

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

500

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

13

A

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

8.1

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

52

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

125

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.2

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

860

mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250µA (Figure 10)

500

-

V

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

-

4.0

V

Gate to Source Leakage

IGSS

VGS = ±20V

-

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

25

µA

VDS = 0.8 x Rated BVDSS,VGS = 0V, TJ = 125

oC

-

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS >ID(ON) x rDS(ON)MAX,VGS = 10V (Figure 7)

13

-

A

Drain to Source On Resistance (Note 2)

rDS(ON)

VGS = 10V, ID = 7.2A (Figures 8, 9)

-

0.3

0.400

Ω

Forward Transconductance (Note 2)

gfs

VDS ≥ 50V, ID = 7.2A (Figure 12)

6.0

11

-

S

Turn-On Delay Time

td(ON)

VDD = 250V, ID ≈ 13A, RG = 6.2Ω, RL = 19Ω

(Figures 17, 18) MOSFET SwitchingTimes are

Essentially Independent of Operating

Temperature

-20

27

ns

Rise Time

tr

-40

66

ns

Turn-Off Delay Time

td(OFF)

-

72

100

ns

Fall Time

tf

-35

60

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID = 13A, VDS = 0.8 x Rated BVDSS,

Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge

is Essentially Independent of Operating

Temperature

-

85

130

nC

Gate to Source Charge

Qgs

-12

-

nC

Gate to Drain “Miller” Charge

Qgd

-42

-

nC

Input Capacitance

CISS

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

-

1800

-

pF

Output Capacitance

COSS

-

400

-

pF

Reverse Transfer Capacitance

CRSS

-

100

-

pF

Internal Drain Inductance

LD

Measured between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins

and the Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

5.0

-

nH

Internal Source Inductance

LS

Measured from the

Source Lead, 6mm

(0.25in) from the Flange

to Source Bonding Pad

-

12.5

-

nH

Thermal Resistance Junction to Case

RθJC

-

0.83

oC/W

Thermal Resistance Junction to Ambient

RθJA

Free Air Operation

-

30

oC/W

LS

LD

G

D

S

IRF450

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