Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF9240 Datenblatt(PDF) 2 Page - Intersil Corporation |
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IRF9240 Datenblatt(HTML) 2 Page - Intersil Corporation |
2 / 7 page 5-27 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF9240 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -200 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -200 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D -11 -7 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM -44 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W/oC Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 790 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC aximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to T J = 125 oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V, (Figure10) -200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125 oC - - -250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = -10V, (Figure 7) -11 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA On Resistance (Note 2) rDS(ON) ID = -6A, VGS = -10V, (Figures 8, 9) - 0.35 0.500 Ω Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = -6A, (Figure 12) 4 6 - S Turn-On Delay Time td(ON) VDD = 1.00 x Rated BVDSS, ID ≈ 11A, RG = 9.1Ω, VGS = 10V, (Figure 17, 18) RL = 17.5Ω for BVDSS = 150V RL = 9.6Ω for BVDSS = 200V MOSFET Switching Times are Essentially Independent of Operating Temperature -18 22 ns Rise Time tr -45 68 ns Turn-Off Delay Time td(OFF) -75 90 ns Fall Time tf -29 44 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = -10V, ID = -11A, VDS = 0.8 x Rated BVDSS, (Figures 14, 19, 20)) Gate Charge is Essentially Independent of Operating Temperature -70 90 nC Gate to Source Charge Qgs -55- nC Gate to Drain “Miller” Charge Qgd -15- nC Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 1100 - pF Output Capacitance COSS - 375 - pF Reverse Transfer Capacitance CRSS - 150 - pF Internal Drain Inductance LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Modified MOSFET Symbol Showing the In- ternal Devices Inductances - 5.0 - nH Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad - 12.5 - nH Thermal Resistance Junction to Case RθJC -- 1 oC/W Thermal Resistance Junction to Ambient RθJA Typical Socket Mount - - 62.5 oC/W LS LD G D S IRF9240 |
Ähnliche Teilenummer - IRF9240 |
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Ähnliche Beschreibung - IRF9240 |
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