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IRF9240 Datenblatt(PDF) 2 Page - Intersil Corporation

Teilenummer IRF9240
Bauteilbeschribung  -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
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Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF9240 Datenblatt(HTML) 2 Page - Intersil Corporation

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5-27
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF9240
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
-200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
-11
-7
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
-44
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
125
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
790
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
aximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to T
J = 125
oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = -250µA, VGS = 0V, (Figure10)
-200
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250µA
-2
-
-4
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
-25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125
oC
-
-
-250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V,
(Figure 7)
-11
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
On Resistance (Note 2)
rDS(ON)
ID = -6A, VGS = -10V, (Figures 8, 9)
-
0.35
0.500
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = -6A, (Figure 12)
4
6
-
S
Turn-On Delay Time
td(ON)
VDD = 1.00 x Rated BVDSS, ID ≈ 11A,
RG = 9.1Ω, VGS = 10V, (Figure 17, 18)
RL = 17.5Ω for BVDSS = 150V
RL = 9.6Ω for BVDSS = 200V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-18
22
ns
Rise Time
tr
-45
68
ns
Turn-Off Delay Time
td(OFF)
-75
90
ns
Fall Time
tf
-29
44
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = -10V, ID = -11A, VDS = 0.8 x Rated BVDSS,
(Figures 14, 19, 20))
Gate Charge is Essentially Independent of
Operating Temperature
-70
90
nC
Gate to Source Charge
Qgs
-55-
nC
Gate to Drain “Miller” Charge
Qgd
-15-
nC
Input Capacitance
CISS
VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)
-
1100
-
pF
Output Capacitance
COSS
-
375
-
pF
Reverse Transfer Capacitance
CRSS
-
150
-
pF
Internal Drain Inductance
LD
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From the Source
Lead, 6mm (0.25in) From
the Flange and the Source
Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
RθJC
--
1
oC/W
Thermal Resistance Junction to
Ambient
RθJA
Typical Socket Mount
-
-
62.5
oC/W
LS
LD
G
D
S
IRF9240


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