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IRFP360 Datenblatt(PDF) 5 Page - Intersil Corporation

Teilenummer IRFP360
Bauteilbeschribung  23A, 400V, 0.200 Ohm, N-Channel Power MOSFET
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Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP360 Datenblatt(HTML) 5 Page - Intersil Corporation

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FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.05
0.95
0.85
0.75
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
120
1.15
80
ID = 250µA
160
VDS, DRAIN TO SOURCE VOLTAGE (V)
10000
8000
6000
4000
2000
0
12
5
10
2
5
102
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
VGS = 0V, f = 1MHz
CISS
COSS
CRSS
50
40
30
20
10
0
0
1020304050
ID, DRAIN CURRENT (A)
TJ = 150
oC
TJ = 25
oC
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
0
0.4
0.8
1.2
1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
102
10
1
TJ = 150
oC
TJ = 25
oC
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
0
25
50
75
100
125
ID = 25A
Qg, GATE CHARGE (nC)
20
16
12
8
4
0
VDS = 80V
VDS = 320V
IRFP360


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