Datenblatt-Suchmaschine für elektronische Bauteile |
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ISL4485 Datenblatt(PDF) 10 Page - Intersil Corporation |
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ISL4485 Datenblatt(HTML) 10 Page - Intersil Corporation |
10 / 11 page 10 Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): GND TRANSISTOR COUNT: 518 PROCESS: Si Gate CMOS FIGURE 15. DRIVER AND RECEIVER WAVEFORMS, LOW TO HIGH FIGURE 16. DRIVER AND RECEIVER WAVEFORMS, HIGH TO LOW FIGURE 17. DRIVER OUTPUT CURRENT vs SHORT CIRCUIT VOLTAGE Typical Performance Curves VCC = 5V, TA = 25oC; Unless Otherwise Specified (Continued) TIME (10ns/DIV) 0 3 4 1 2 RDIFF = 54Ω, CL = 100pF DI A / Y RO 0 5 0 5 B / Z TIME (10ns/DIV) 0 DI RO 3 4 1 2 0 5 0 5 RDIFF = 54Ω, CL = 100pF B / Z A / Y OUTPUT VOLTAGE (V) -7 -6 -4 -2 0 2 4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 -80 -100 -120 Y OR Z = HIGH Y OR Z = LOW ISL4485E |
Ähnliche Teilenummer - ISL4485 |
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Ähnliche Beschreibung - ISL4485 |
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