Datenblatt-Suchmaschine für elektronische Bauteile |
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SI4946DY Datenblatt(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI4946DY Datenblatt(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
3 / 5 page SMD Type www.kexin.com.cn 3 MOSFET Dual N-Channel MOSFET SI4946DY (KI4946DY) ■ Typical Characterisitics Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V GS = 10 V thru 5 V 4 V VDS - Drain-to-Source Voltage (V) 3 V 0.000 0.020 0.040 0.060 0.080 0.100 0 5 10 15 20 25 30 V GS = 10 V ID - Drain Current (A) V GS = 4.5 V 0 2 4 6 8 10 0 4 8 12 16 20 ID = 5.3 A Qg - Total Gate Charge (nC) V DS = 48 V V DS = 30 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 °C T C = 150 °C - 55 °C VGS - Gate-to-Source Voltage (V) 0 200 400 600 800 1000 1200 0 10 20 30 40 50 60 C rss C oss C iss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 V GS = 10 V TJ - Junction Temperature (°C) V GS = 4.5 V ID = 5.3 A |
Ähnliche Teilenummer - SI4946DY |
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Ähnliche Beschreibung - SI4946DY |
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