Datenblatt-Suchmaschine für elektronische Bauteile |
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BCX51 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCX51 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page BCX51 PNP Transistors Plastic-Encapsulate Transistors RoHS Compliant Product Elektronische Bauelemente 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Any changing of specification will not be informed individual http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Page 1 of 1 4.4~4.6 1.4~1.8 0.35~0.44 1.4~1.6 0.32~0.52 0.36~0.56 1.5Ref. 2.9~3.1 Dimensision in Millimeter SOT-89 Power dissipation PCM: 0.5 W (Tamb=25 ) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -45 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT C o C o C o C o Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -45 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-2V, IC=-150mA 63 63 100 250 160 250 hFE(2) VCE=-2V, IC=- 5mA 63 DC current gain BCX51 BCX51-10 BCX51-16 hFE(3) VCE=-2V, IC=- 500mA 40 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.5 V Base-emitter voltage VBE(ON) IC= -500 mA, VCE=-2V -1 V Transition frequency f T VCE= -5V, IC=-10mA f = 100MHz 50 MHz DEVICE MARKING BCX51=AA BCX51-10=AC BCX51-16=AD |
Ähnliche Teilenummer - BCX51_15 |
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Ähnliche Beschreibung - BCX51_15 |
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