Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2310C Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2310C Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE2310C Plastic-Encapsulate MOSFET VER 1.1 1 Description The ACE2310C uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features • High power and current handing capability • Lead free product is acquired • Surface mount package Applications • Battery Switch • DC/DC Converter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current (note 1) IDM 10 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient (note 2) RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~150 Packaging Type SOT-23-3 Equivalent Circuit Ordering information ACE2310C XX + H BM:SOT-23-3 Pb - free Halogen - free |
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