Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3366 Datenblatt(PDF) 7 Page - Renesas Technology Corp |
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2SK3366 Datenblatt(HTML) 7 Page - Renesas Technology Corp |
7 / 9 page Data Sheet D14256EJ4V0DS 5 2SK3366 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C 0 − 50 20 10 0 50 100 150 ID = 10 A 40 50 30 10 V 4.5 V VGS = 4.0 V 1.0 1.2 0 1.6 1.4 VSD - Source to Drain Voltage - V 0.2 0.4 0.6 0.8 Pulsed VGS = 10 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.1 1 10 100 0 V 4.5 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V 10 0.1 0.01 100 1000 10000 1 10 100 VGS = 0 V f = 1 MHz Coss Crss Ciss SWITCHING CHARACTERISTICS ID - Drain Current - A 1 0.1 10 100 10000 1000 1 10 100 VDD = 15 V VGS = 10 V RG = 10 Ω tf tr td(on) td(off) REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Diode Current - A di/dt = 100 A/ μs VGS = 0 V 1 0.1 10 1 10 100 1000 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS QG - Gate Charge - nC 0 10 20 10 20 30 40 2 4 6 8 0 VDD = 24 V 15 V 6 V VDS 12 14 10 ID = 20 A VGS 5 15 |
Ähnliche Teilenummer - 2SK3366_15 |
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Ähnliche Beschreibung - 2SK3366_15 |
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