IRF1104

PRELIMINARY

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

S

D

G

Parameter

Max.

Units

100

…

71

A

Pulsed Drain Current



400

Power Dissipation

170

W

Linear Derating Factor

1.11

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

350

mJ

Avalanche Current



60

A

Repetitive Avalanche Energy



17

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.90

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

…

TO-220AB

Description

4/24/98

www.irf.com

1

PD- 9.1724A