IRF1407S datasheet(1/11 Pages) IRF

Teilenummer	IRF1407S

Bauteilbeschribung	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

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Hersteller	IRF [International Rectifier]

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Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

X

100

V

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10VX

70

V

A

IDM

Pulsed Drain Current

QX

520

PD @TA = 25°C

Power Dissipation

3.8

W

PD @TC = 25°C

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

RX

390

mJ

IAR

Avalanche Current

Q

See Fig.12a, 12b, 15, 16

A

EAR

Repetitive Avalanche Energy

W

mJ

dv/dt

Peak Diode Recovery dv/dt

SX

4.6

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

HEXFET® Power MOSFET

S

D

G

Absolute Maximum Ratings

VDSS = 75V

RDS(on) = 0.0078Ω

ID = 100A

V

Description

10/05/01

www.irf.com

1

q

Advanced Process Technology

q

Ultra Low On-Resistance

q

Dynamic dv/dt Rating

q

175°C Operating Temperature

q

Fast Switching

q

Repetitive Avalanche Allowed up to Tjmax

Benefits

PD -94335

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.75

°C/W

RθJA

Junction-to-Ambient(PCB Mounted,steady-state)**

–––

40

Thermal Resistance

IRF1407S

IRF1407L

TO-262

IRF1407L

D2Pak

IRF1407S

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

existing surface mount package. The D2Pak is suitable for

high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF1407L) is available for low-

profile applications.

**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer

to application note #AN-994.

Ähnliche Beschreibung - IRF1407S

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
International Rectifier	IRF1407SPBF	258Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )
	IRFR2407	129Kb / 10P	Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A??
	IRF3808	131Kb / 9P	Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A??
	IRFP2907	115Kb / 9P	Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A??
	IRF1407	127Kb / 9P	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??
	IRF1607	234Kb / 9P	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A??
	IRF1104	101Kb / 8P	Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
	IRL2203S	173Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A??
	IRFP2907PBF	207Kb / 10P	AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5m廓 , ID = 209A)
	IRF1104PBF	190Kb / 9P	HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A )

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