Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4331 Datenblatt(PDF) 3 Page - Renesas Technology Corp |
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2SC4331 Datenblatt(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. SILICON POWER TRANSISTOR 2SC4331,4331-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DATA SHEET 2002 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Document No. D16136EJ3V0DS00 (3rd edition) Date Published January 2007 NS CP(K) Printed in Japan The 2SC4331 and 2SC4331-Z are mold power transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. FEATURES • Available for high-current control in small dimension • Z type is a lead-processed product and is deal for mounting a hybrid IC. • Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Fast switching speed: tf ≤ 0.4 μs MAX. (IC = 3.0 A) • High DC current gain and excellent linearity ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage VCBO 150 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 7.0 V Collector Current (DC) IC(DC) 5.0 A Collector Current (pulse) Note 1 IC(pulse) 10 A Base Current (DC) IB(DC) 2.5 A Total Power Dissipation (TC = 25 °C) PT1 15 W Total Power Dissipation (TA = 25 °C) PT2 1.0 Note 2, 2.0 Note 3 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 ms, duty cycle ≤ 50% 2. Printing board mounted 3. 7.5 cm 2 × 0.7 mm, ceramic board mounted PACKAGE DRAWING (Unit: mm) 2 13 6.5 ±0.2 5.0 ±0.2 4 2.3 2.3 0.5 ±0.1 2.3 ±0.2 1.1 ±0.2 0.5 −0.1 +0.2 0.5 −0.1 +0.2 12 3 4 6.5 ±0.2 4.4 ±0.2 5.0 ±0.2 0.5 ±0.1 0.5 ±0.1 2.3 ±0.2 0.5 ±0.1 Note Note 0.15 ±0.15 2.3 ±0.3 2.3 ±0.3 TO-252 (MP-3Z) Electrode Connectio 1. Base 2. Collector 3. Emitter 4. Collector Fin Note The depth of notch at the top of the fin is from 0 to 0.2 mm. TO-251 (MP-3) <R> |
Ähnliche Teilenummer - 2SC4331_15 |
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Ähnliche Beschreibung - 2SC4331_15 |
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