N0300N_15 datasheet(4/8 Pages) RENESAS

Teilenummer	N0300N

Bauteilbeschribung	MOS FIELD EFFECT TRANSISTOR

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Data Sheet D19781EJ1V0DS

2

N0300N

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

μA

Gate Leakage Current

IGSS

VGS =

±16 V, VDS = 0 V

±10

μA

Gate to Source Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1.0 mA

1.0

2.5

V

Forward Transfer Admittance

Note

| yfs |

VDS = 10 V, ID = 2.0 A

1.0

S

RDS(on)1

VGS = 10 V, ID = 2.0 A

38

50

m

Ω

Drain to Source On-state Resistance

Note

RDS(on)2

VGS = 4.5 V, ID = 2.0 A

48

83

m

Ω

Input Capacitance

Ciss

VDS = 10 V,

350

pF

Output Capacitance

Coss

VGS = 0 V,

65

pF

Reverse Transfer Capacitance

Crss

f = 1.0 MHz

30

pF

Turn-on Delay Time

td(on)

VDD = 15 V, ID = 2.0 A,

6.5

ns

Rise Time

tr

VGS = 10 V,

3.0

ns

Turn-off Delay Time

td(off)

RG = 6

Ω

16.5

ns

Fall Time

tf

3.0

ns

Total Gate Charge

QG

VDD = 24 V, VGS = 10 V, ID = 4.5 A

7.4

nC

Body Diode Forward Voltage

Note

VF(S-D)

IF = 4.5 A, VGS = 0 V

0.9

V

Note Pulsed

TEST CIRCUIT SWITCHING TIME

PG.

RG

0

VGS

D.U.T.

RL

VDD

τ = 1 s

μ

Duty Cycle

≤ 1%

VGS

Wave Form

ID

Wave Form

VGS

10%

90%

VGS

10%

0

ID

90%

td(on)

tr

td(off)

tf

10%

τ

ID

0

ton

toff

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