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IRF7702 Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRF7702
Bauteilbeschribung  Power MOSFET(Vdss=-12V)
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7702 Datenblatt(HTML) 2 Page - International Rectifier

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IRF7702
2
www.irf.com
PROVISIONAL
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.007 –––
V/°C
Reference to 25°C, ID = -1mA
–––
––– 0.014
VGS = -4.5V, ID = -8.0A
‚
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.019
VGS = -2.5V, ID = -7.0A
‚
–––
––– 0.027
VGS = -1.8V, ID = -5.8A
‚
VGS(th)
Gate Threshold Voltage
-0.45 –––
-1.2
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
26
–––
–––
S
VDS = -10V, ID = -8.0A
–––
–––
1.0
VDS = -12V, VGS = 0V
–––
–––
-25
VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -8.0V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 8.0V
Qg
Total Gate Charge
–––
54
81
ID = -8.0A
Qgs
Gate-to-Source Charge
–––
7.8
12
nC
VDS = -9.6V
Qgd
Gate-to-Drain ("Miller") Charge
–––
15
23
VGS = -4.5V
‚
td(on)
Turn-On Delay Time
–––
16
–––
VDD = -6.0V
tr
Rise Time
–––
21
–––
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
320
–––
RD = 6.0Ω
tf
Fall Time
–––
250
–––
RG = 6.0Ω
‚
Ciss
Input Capacitance
––– 3470 –––
VGS = 0V
Coss
Output Capacitance
––– 1040 –––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
–––
670
–––
ƒ = 1.0MHz
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -1.5A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
58
87
ns
TJ = 25°C, IF = -1.5A
Qrr
Reverse RecoveryCharge
–––
41
62
nC
di/dt = 100A/µs
‚
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
-70
-1.5
A
ƒ When mounted on 1 inch square copper board, t<10 sec
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
IDSS
Drain-to-Source Leakage Current
nA
ns
S
D
G


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