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IRF7703 Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF7703
Bauteilbeschribung  Power MOSFET(Vdss=-40V)
Download  9 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7703 Datenblatt(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-40
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-6.0
ID @ TA= 70°C
Continuous Drain Current, VGS @ -10V
-4.7
A
IDM
Pulsed Drain Current

-24
PD @TA = 25°C
Power Dissipation
ƒ
1.5
PD @TA = 70°C
Power Dissipation
ƒ
0.96
Linear Derating Factor
0.012
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
05/11/01
www.irf.com
1
IRF7703
HEXFET® Power MOSFET
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
83
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
VDSS
RDS(on) max (mΩ)
Ω)
Ω)
Ω)
Ω)
ID
-40V
28@VGS = -10V
-6.0A
45@VGS = -4.5V
-4.8A
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
G
4
3
2
1
1 = D
2 = S
3 = S
4 = G
S
D
5
6
7
8
5 = D
6 = S
7 = S
8 = D
PD - 94221


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