Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7703 Datenblatt(PDF) 1 Page - International Rectifier |
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IRF7703 Datenblatt(HTML) 1 Page - International Rectifier |
1 / 9 page Parameter Max. Units VDS Drain- Source Voltage -40 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -6.0 ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -4.7 A IDM Pulsed Drain Current -24 PD @TA = 25°C Power Dissipation 1.5 PD @TA = 70°C Power Dissipation 0.96 Linear Derating Factor 0.012 W/°C VGS Gate-to-Source Voltage ± 20 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 05/11/01 www.irf.com 1 IRF7703 HEXFET® Power MOSFET Parameter Max. Units RθJA Maximum Junction-to-Ambient 83 °C/W Thermal Resistance Absolute Maximum Ratings W VDSS RDS(on) max (mΩ) Ω) Ω) Ω) Ω) ID -40V 28@VGS = -10V -6.0A 45@VGS = -4.5V -4.8A Description l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides the de- signer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 G 4 3 2 1 1 = D 2 = S 3 = S 4 = G S D 5 6 7 8 5 = D 6 = S 7 = S 8 = D PD - 94221 |
Ähnliche Teilenummer - IRF7703 |
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Ähnliche Beschreibung - IRF7703 |
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