www.irf.com

2

IRF7901D1

Parameter

Min

Typ

Max

Min

Typ

Max Units

Conditions

Drain-to-Source

BV

DSS

30

–

–

30

–

–

V

V

Breakdown Voltage*

Static Drain-Source

R

–

28

38

–

23

32

m

Ω

V

on Resistance*

Gate Threshold Voltage* V

1.0

–

–

1.0

–

–

V

V

Drain-Source Leakage

I

DSS

–

–

30

–

–

30

µA

V

–

–

0.15

–

–

4.3

mA

V

Gate-Source Leakage

I

GSS

–

–

±100

–

–

±100

nA

V

Current*

Total Gate Charge*

Q

G cont

–

7.6

10.5

–

15.5

21.0

V

Q

G synch

–

6.7

9.0

–

13.5

18.3

V

Pre-Vth

Q

GS1

–

2.0

–

–

5.5

–

V

Gate-Source Charge

Post-Vth

Q

GS2

–

0.5

–

–

0.9

–

nC

Gate-Source Charge

Gate to Drain Charge

Q

GD

–

1.9

–

–

4.7

–

Switch Charge*

Q

sw

–

2.4

3.8

–

5.6

9.0

(Q

Output Charge*

Q

oss

–

13.5

18.0

–

9.0

12.3

V

Gate Resistance

R

G

–

3.4

–

–

4.3

–

Ω

Input Capacitance

C

iss

–

780

–

–

1810

–

Output Capacitance

C

oss

–

430

–

–

310

–

pF

V

Transfer Capacitance

C

rss

–

30

–

–

110

–

Turn-On Delay Time

t

–

7.2

–

–

10.4

–

V

Rise Time

t

r

–

13.8

–

–

16.4

–

ns

Clamped inductive load

Turn-Off Delay Time

t

–

14.7

–

–

14.6

–

See test diagram Fig 17.

FallTime

t

f

–8––

5.2

–

Electrical Characteristics

Q1 - Control FET

Q2 - Synch FET

& Schottky

Source-Drain Ratings and Characteristics

Q1

Q2 &

parallel Schottky

Parameter

Min

Typ

Max

Min

Typ

Max Units

Conditions

Diode Forward

V

SD

–

0.7

1.0

–

0.48

0.52

V

I

Voltage*

k

Reverse Recovery

Q

rr

–

62.3

–

–

8.9

–

nC

dl/dt = 700A/us

Charge

V



Repetitive rating; pulse width limited by max. junction temperature.

‚

Pulse width

≤ 300 µs; duty cycle ≤ 2%.

ƒ

When mounted on 1 inch square copper board, t < 10 sec.

m

Combined Q1, Q2 I

current based on maximum allowable junction temperature;

switching or other losses will decrease RMS current capability

…

When mounted on IRNBPS2 design kit. Measured as device T

J

to Pwr leads (V

*

Devices are 100% tested to these parameters.