Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFB13N50A Datenblatt(PDF) 4 Page - International Rectifier |
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IRFB13N50A Datenblatt(HTML) 4 Page - International Rectifier |
4 / 8 page IRFB13N50A 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 10000 100000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds+ Cgd 0 12 24 36 48 60 0 2 5 7 10 12 Q , Total Gate Charge (nC) G I = D 14A V = 100V DS V = 250V DS V = 400V DS 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 150 C J ° 10 100 1000 10000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 1000 Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec |
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