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IRFB13N50A Datenblatt(PDF) 4 Page - International Rectifier

Teilenummer IRFB13N50A
Bauteilbeschribung  Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFB13N50A Datenblatt(HTML) 4 Page - International Rectifier

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IRFB13N50A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
0
12
24
36
48
60
0
2
5
7
10
12
Q , Total Gate Charge (nC)
G

I
=
D
14A

V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
0.1
1
10
100
0.2
0.5
0.8
1.1
1.4
V
,Source-to-Drain Voltage (V)
SD

V
= 0 V
GS

T = 25 C
J
°

T = 150
C
J
°
10
100
1000
10000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec


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