Datenblatt-Suchmaschine für elektronische Bauteile |
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BTA08-600CW Datenblatt(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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BTA08-600CW Datenblatt(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 4 page GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 °C/W Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W BTB 3.2 Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) BTA 3.3 °C/W BTB 2.4 Symbol Test Conditions Quadrant Suffix Unit SA IGT VD=12V (DC) RL=33Ω Tj=25 °C I-II-III MAX 10 10 mA IV MAX 10 25 VGT VD=12V (DC) RL=33Ω Tj=25 °C I-II-III-IV MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=110 °C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 40mA dIG/dt = 0.5A/µs Tj=25 °C I-II-III-IV TYP 2 µs IL IG= 1.2 IGT Tj=25 °C I-III-IV TYP 20 20 mA II 40 40 IH *IT= 100mA gate open Tj=25 °C MAX 25 25 mA VTM *ITM= 11A tp= 380µs Tj=25 °C MAX 1.75 V IDRM IRRM VDRM Rated VRRM Rated Tj=25 °C MAX 0.01 mA Tj=110 °C MAX 0.75 dV/dt * Linear slope up to VD=67%VDRM gate open Tj=110 °C MIN 10 10 V/ µs (dV/dt)c * (dI/dt)c= 3.5A/ms Tj=110 °C TYP 5 5 V/ µs * For either polarity of electrode A2 voltage with reference to electrode A1. PG (AV) =1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS BTA08 S/A / BTB08 S/A THERMAL RESISTANCES 2014-6-9 1 www.kersemi.com |
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Ähnliche Beschreibung - BTA08-600CW |
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