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2SJ484 Datenblatt(PDF) 5 Page - Renesas Technology Corp

Teilenummer 2SJ484
Bauteilbeschribung  Silicon P Channel MOS FET
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ484 Datenblatt(HTML) 5 Page - Renesas Technology Corp

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2SJ484
Rev.3.00 Sep 07, 2005 page 3 of 6
Main Characteristics
2.0
0.5
0
1.0
1.5
0
50
100
150
200
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Test Condition:
When using the aluminum ceramic
board (12.5
× 20 × 70 mm)
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
–0.1
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–3
–0.3
–0.03
Operation in
this area is
limited by RDS (on)
Ta = 25°C
–5
–4
–3
0
–1
–2
0
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
–3 V
Pulse Test
–4.5 V
–3.5 V
–4 V
–2
–4
–6
–8
–10
–5
0
–1
–2
–3
–4
0
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–1
–2
–3
–4
–5
Tc = 75°C
–25°C
25°C
VDS = –10 V
Pulse Test
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–4
–8
–12
–16
–20
Pulse Test
ID = –2 A
–0.5 A
–1 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
2
1
0.5
0.2
0.1
–20
–10 V
VGS = –4 V
Pulse Test
–0.1 –0.2
–0.5 –1
–2
–5
–10
100
µs
DC
Operation
1 ms
PW
= 10
ms
(1
shot)
VGS = –2.5 V
–10 V –6 V
–5 V


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