Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ505(L) Datenblatt(PDF) 7 Page - Renesas Technology Corp |
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2SJ505(L) Datenblatt(HTML) 7 Page - Renesas Technology Corp |
7 / 11 page 2SJ505(L), 2SJ505(S) Rev.5.00 Jun 05, 2006 page 5 of 8 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage 250 25 50 75 100 125 150 0 50 100 150 200 Channel Temperature Tch (°C) Maximum Avalanche Energy vs. Channel Temperature Derating IAP = –50 A VDD = –25 V duty < 0.1 % Rg ≥ 50 Ω –100 0 –20 –40 –60 –80 0 –0.4 –0.8 –1.2 –1.6 –2.0 Pulse Test –5 V VGS = 0 –10 V Avalanche Test Circuit Avalanche Waveform 0 ID VDS IAP V(BR)DSS VDD EAR = • L • IAP 2 • 2 1 VDSS VDSS – VDD D.U.T Rg IAP Monitor VDS Monitor VDD 50 Ω Vin –15 V L Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse PDM PW T D = PW T θch – c (t) = γ s (t) • θch – c θch – c = 1.67°C/W, Tc = 25°C |
Ähnliche Teilenummer - 2SJ505(L)_15 |
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Ähnliche Beschreibung - 2SJ505(L)_15 |
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