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IRL630 Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRL630
Bauteilbeschribung  Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRL630 Datenblatt(HTML) 1 Page - International Rectifier

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IRL630
HEXFET® Power MOSFET
PD -9.1255
Revision 0
VDSS = 200V
RDS(on) = 0.40
ID = 9.0A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, V GS @ 5.0V
9.0
ID @ TC = 100°C
Continuous Drain Current, V GS @ 5.0V
5.7
A
IDM
Pulsed Drain Current
36
PD @TC = 25°C
Power Dissipation
74
W
Linear Derating Factor
0.59
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
250
mJ
IAR
Avalanche Current
9.0
A
EAR
Repetitive Avalanche Energy
7.4
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
––––
––––
1.7
RθCS
Case-to-Sink, Flat, Greased Surface
––––
0.50
––––
°C/W
RθJA
Junction-to-Ambient
––––
––––
62
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
150°C Operating Temperature
Fast Switching
Ease of paralleling
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
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