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IRL630 Datenblatt(PDF) 1 Page - International Rectifier |
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IRL630 Datenblatt(HTML) 1 Page - International Rectifier |
1 / 8 page IRL630 HEXFET® Power MOSFET PD -9.1255 Revision 0 VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A Absolute Maximum Ratings Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 5.0V 9.0 ID @ TC = 100°C Continuous Drain Current, V GS @ 5.0V 5.7 A IDM Pulsed Drain Current 36 PD @TC = 25°C Power Dissipation 74 W Linear Derating Factor 0.59 W/°C VGS Gate-to-Source Voltage ±10 V EAS Single Pulse Avalanche Energy 250 mJ IAR Avalanche Current 9.0 A EAR Repetitive Avalanche Energy 7.4 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Parameter Min. Typ. Max. Units RθJC Junction-to-Case –––– –––– 1.7 RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W RθJA Junction-to-Ambient –––– –––– 62 Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Description Next Data Sheet Index Previous Datasheet To Order |
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