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IRLML5103 Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRLML5103
Bauteilbeschribung  Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLML5103 Datenblatt(HTML) 2 Page - International Rectifier

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IRLML5103
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.029 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.60
VGS = -10V, ID = -0.60A ƒ
––– ––– 1.0
VGS = -4.5V, ID = -0.30A ƒ
VGS(th)
Gate Threshold Voltage
-1.0 ––– –––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
0.44 ––– –––
S
VDS = -10V, ID = -0.30A
––– ––– -1.0
VDS = -24V, VGS = 0V
––– ––– -25
VDS = -24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -20V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 3.4
5.1
ID = -0.60A
Qgs
Gate-to-Source Charge
––– 0.52 0.78
nC
VDS = -24V
Qgd
Gate-to-Drain ("Miller") Charge
––– 1.1
1.7
VGS = -10V, See Fig. 6 and 9 ƒ
td(on)
Turn-On Delay Time
–––
10
–––
VDD = -15V
tr
Rise Time
––– 8.2 –––
ID = -0.60A
td(off)
Turn-Off Delay Time
–––
23
–––
RG = 6.2Ω
tf
Fall Time
–––
16
–––
RD = 25Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
–––
75
–––
VGS = 0V
Coss
Output Capacitance
–––
37
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
18
–––
ƒ = 1.0MHz, See Fig. 5
µA
nA
ns
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(ON)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -0.60A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
26
39
ns
TJ = 25°C, IF = -0.60A
Qrr
Reverse RecoveryCharge
–––
20
30
nC
di/dt = 100A/µs ƒ
Source-Drain Ratings and Characteristics
A
S
D
G
––– ––– -0.54
––– ––– -4.8
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ I
SD ≤ -0.60A, di/dt ≤ 110A/µs, V
DD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 5sec.


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