Datenblatt-Suchmaschine für elektronische Bauteile |
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SSY5829P Datenblatt(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSY5829P Datenblatt(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente SSY5829P -2.5 A, -20 V, RDS(ON) 0.110 P-Channel Enhancement MOSFET With Schottky Diode 14-Jan-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) -0.4 - - V VDS = VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±8V - - -1 VDS = -16V, VGS= 0V Zero Gate Voltage Drain Current IDSS - - -10 μA VDS = -16V, VGS= 0V, TJ=55°C On-State Drain Current 1 ID(ON) -5 - - A VDS = -5V, VGS= -4.5V - - 0.110 VGS= -4.5V, ID = -3.6A Drain-Source On-State Resistance 1 RDS(ON) - - 0.160 Ω VGS= -2.5V, ID = -3.0A Forward Transconductance 1 gFS - 3 - S VDS= -5V,,ID = -3.6A Diode Forward Voltage VSD - -0.70 - V IS= -1.6A, VGS=0V Dynamic 2 Total Gate Charge Qg - 6.0 - Gate-Source Charge Qgs - 0.80 - Gate-Drain Charge Qgd - 1.30 - nC ID= -3.6A VDS= -5V VGS= -4.5V Turn-On Delay Time Td(ON) - 6.5 - Rise Time Tr - 20 - Turn-Off Delay Time Td(OFF) - 31 - Fall Time Tf - 21 - nS VDD= -5V VGEN= -4.5V RG= 6Ω RL= 5Ω SCHOTTKY SPECIFICATIONS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions - - 0.48 IF= 0.5A Forward Voltage Drop 1 VF - - 0.4 V IF= 0.5A, TJ=125°C - - 0.1 Vr= 30V - - 1 Vr= 30V, TJ=75°C Maximum Reverse Leakage Current IRM - - 10 mA Vr= 30V, TJ=125°C Junction Capacitance CT - 31 - pF Vr= 10V Notes: 1. Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. |
Ähnliche Teilenummer - SSY5829P_15 |
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Ähnliche Beschreibung - SSY5829P_15 |
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