Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ552(L) Datenblatt(PDF) 3 Page - Renesas Technology Corp |
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2SJ552(L) Datenblatt(HTML) 3 Page - Renesas Technology Corp |
3 / 11 page Rev.4.00 Sep 07, 2005 page 1 of 8 2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1. Gate 2. Drain 3. Source 4. Drain D G S 1 2 3 4 1 2 3 4 |
Ähnliche Teilenummer - 2SJ552(L)_15 |
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Ähnliche Beschreibung - 2SJ552(L)_15 |
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