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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ649 Datenblatt(PDF) 4 Page - Renesas Technology Corp |
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2SJ649 Datenblatt(HTML) 4 Page - Renesas Technology Corp |
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4 / 10 page  Data Sheet D16332EJ1V0DS 2 2SJ649 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Condtions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = m 20 V, VDS = 0 V m 10 µA Gate Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.5 –2.0 –2.5 V Forward Transfer Admittance Note | yfs |VDS = –10 V, ID = –10 A 10 20 S RDS(on)1 VGS = –10 V, ID = –10 A 38 48 m Ω Drain to Source On-state Resistance Note RDS(on)2 VGS = –4.0 V, ID = –10 A 47 75 m Ω Input Capacitance Ciss VDS = –10 V 1900 pF Output Capacitance Coss VGS = 0 V 350 pF Reverse Transfer Capacitance Crss f = 1 MHz 140 pF Turn-on Delay Time td(on) VDD = –30 V, ID = –10 A 10 ns Rise Time tr VGS = –10 V 10 ns Turn-off Delay Time td(off) RG = 0 Ω 73 ns Fall Time tf 17 ns Total Gate Charge QG VDD = –48 V 38 nC Gate to Source Charge QGS VGS = –10 V 7 nC Gate to Drain Charge QGD ID = –20 A 10 nC Body Diode Forward Voltage Note VF(S-D) IF = 20 A, VGS = 0 V 0.95 V Reverse Recovery Time trr IF = 20 A, VGS = 0 V 49 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 100 nC Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω PG L VDD VGS = –20 → 0 V BVDSS IAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG 0 VGS ( −) D.U.T. RL VDD τ = 1 s µ Duty Cycle ≤ 1% VGS Wave Form VDS Wave Form VGS ( −) 10% 90% 10% 0 VDS ( −) 90% 90% td(on) tr td(off) tf 10% τ VDS 0 ton toff PG. 50 Ω D.U.T. RL VDD IG = −2 mA − VGS |
Ähnliche Teilenummer - 2SJ649_15 |
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Ähnliche Beschreibung - 2SJ649_15 |
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