Datenblatt-Suchmaschine für elektronische Bauteile |
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KIC7WZ08FK Datenblatt(PDF) 1 Page - KEC(Korea Electronics) |
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KIC7WZ08FK Datenblatt(HTML) 1 Page - KEC(Korea Electronics) |
1 / 3 page 2002. 3. 7 1/3 SEMICONDUCTOR TECHNICAL DATA KIC7WZ08FK SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT Revision No : 1 2 INPUT AND GATE FEATURES High output drive : 24mA(min.) @VCC=3V. Super high speed operation : tpd 2.4ns(typ.) @VCC=5V, 50pF. Operation voltage range : VCC(opr)=1.65~5.5V. Latch-up performance : 500mA or more ESD performance : 200V or more (EIAJ) 2000V or more (MIL) Power down protection is provided on all inputs and outputs. DIM MILLIMETERS A B D E US8 2.0 0.1 3.1 0.1 2.3 0.1 0.5 0.2+0.05/-0.04 0.7 0.1 0.12 0.04 0 ~ 0.1 C F G H C B G H 1 45 8 +_ +_ +_ +_ +_ MAXIMUM RATINGS (Ta=25 ) MARKING Lot No. Z08 Type Name CHARACTERISTIC SYMBOL RATING UNIT Power Supply Voltage VCC -0.5~6 V DC Input Voltage VIN -0.5~6 V DC Output Voltage VOUT -0.5~6 V Input Diode Current IIK -20 mA Output Diode Current IOK -20 mA DC Output Current IOUT 50 mA DC VCC/ground Current ICC 50 mA Power Dissipation PD 200 mW Storage Temperature Range Tstg -65 150 Lead Temperature (10s) TL 260 PIN CONNECTION(TOP VIEW) 1 2 3 4 1Y 2B 2A 8 7 6 5 VCC 1A 1B 2Y GND |
Ähnliche Teilenummer - KIC7WZ08FK |
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Ähnliche Beschreibung - KIC7WZ08FK |
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