Datenblatt-Suchmaschine für elektronische Bauteile |
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KRC285M Datenblatt(PDF) 1 Page - KEC(Korea Electronics) |
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KRC285M Datenblatt(HTML) 1 Page - KEC(Korea Electronics) |
1 / 2 page 2002. 12. 5 1/2 SEMICONDUCTOR TECHNICAL DATA KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. 1 2 3 TO-92M DIM MILLIMETERS A B C D E F G H J K 1. EMITTER 2. COLLECTOR 3. BASE 3.20 MAX 4.30 MAX 0.55 MAX 2.40 0.15 1.27 2.30 14.00 0.50 0.60 MAX 1.05 1.45 25 0.55 MAX L M N EE L N M C H 0.80 O0.75 O B +_ +_ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 25 V Collector Current IC 300 mA Collector Power Dissipation PC 400 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 MAXIMUM RATING (Ta=25 ) EQUIVALENT CIRCUIT R1 C E B |
Ähnliche Teilenummer - KRC285M |
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Ähnliche Beschreibung - KRC285M |
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