Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4936G Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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1N4936G Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM 50 100 200 400 600 V VRMS 35 70 140 280 420 V VDC 50 100 200 400 600 V IF(AV) A Trr ns Cj pF RθJA OC/W TJ OC TSTG OC Note1: Pulse Test with PW=300μs, 1% Duty Cycle Note2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS_D1310003 Version: F13 1N4933G thru 1N4937G Glass Passivated Fast Recovery Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Taiwan Semiconductor MECHANICAL DATA 1N 4934G 1N 4935G 1N 4936G Case: DO-204AL (DO-41) DO-204AL (DO-41) Weight: 0.33 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) 1N 4937G UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1.0 PARAMETER SYMBOL 1N 4933G Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum instantaneous forward voltage (Note 1) @ 1 A VF V 1.2 Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR 5 150 Maximum reverse recovery time (Note 2) μA 200 10 - 55 to +150 Operating junction temperature range Storage temperature range - 55 to +150 Typical junction capacitance (Note 3) Typical thermal resistance 65 |
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Ähnliche Beschreibung - 1N4936G |
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