1N4448_15 datasheet(2/5 Pages) VISHAY

Teilenummer	1N4448

Bauteilbeschribung	Small Signal Fast Switching Diodes

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Hersteller	VISHAY [Vishay Siliconix]

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1N4448

www.vishay.com

Vishay Semiconductors

Rev. 1.1, 06-May-13

2

Document Number: 81858

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Voltage vs. Junction Temperature

Fig. 2 - Forward Current vs. Forward Voltage

Fig. 3 - Reverse Current vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 5 mA

VF

0.620

0.720

V

IF = 100 mA

VF

1V

Reverse current

VR = 20 V

IR

25

nA

VR = 20 V, Tj = 150 °C

IR

50

μA

VR = 75 V

IR

5μA

Breakdown voltage

IR = 100 μA, tp/T = 0.01,

tp = 0.3 ms

V(BR)

100

V

Diode capacitance

VR = 0, f = 1 MHz, VHF = 50 mV

CD

4pF

Rectification efficiency

VHF = 2 V, f = 100 MHz

r45

%

Reverse recovery time

IF = IR = 10 mA, iR = 1 mA

trr

8ns

IF = 10 mA, VR = 6 V,

iR = 0.1 x IR, RL = 100 

trr

4ns

0

0.2

0.4

0.6

0.8

1.2

Tj - Junction Temperature (°C)

94 9169

1.0

IF = 100 mA

10 mA

1mA

0.1 mA

- 30

30

60

90

120

0

0.4

0.8

1.2

1.6

0.1

1

10

100

1000

VF - Forward Voltage (V)

2.0

94 9171

Scattering Limit

T = 25 °C

j

1N4448

1

10

100

1000

V

R- Reverse Voltage (V)

10

1

100

94 9098

T

j = 25 °C

Scattering Limit

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