SI7157DP datasheet(4/14 Pages) VISHAY

Teilenummer	SI7157DP

Bauteilbeschribung	P-Channel 20-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7157DP

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4

Document Number: 62860

S13-1665-Rev. A, 29-Jul-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 150 °C

T

J = 25 °C

- 0.4

- 0.2

0.2

0

0.4

0.6

- 50

- 25

0

25

50

75

100

125

150

T

J - Temperature (°C)

I

D = 250 μA

I

D = 1 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.002

0.004

0.006

0.008

0.010

0

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

T

J = 125 °C

T

J = 25 °C

I

D = 20 A

0

100

200

300

400

500

0.001

0.01

0.1

1

10

Time (s)

Safe Operating Area

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

I

DM Limited

T

A = 25 °C

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

DC

I

D Limited

100 μs

Ähnliche Beschreibung - SI7157DP

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
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