Datenblatt-Suchmaschine für elektronische Bauteile |
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TSC5303D Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC5303D Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page TSC5303D High Voltage NPN Transistor with Diode 1/6 Version: C14 TO-251 (IPAK) TO-252 (DPAK) PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 3A VCE(SAT) 0.17V @ IC=1A, IB=0.25A Features ● Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation ● No Need to Interest an hFE Value Because of Low Variable Storage-time Spread Even Though Comer Spirit Product. ● Low Base Drive Requirement ● Suitable for Half Bridge Light Ballast Application Block Diagram Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor ● Integrated Anti-parallel Collector-Emitter Diode Ordering Information Part No. Package Packing TSC5303DCP ROG TO-252 2.5kpcs / 13” Reel TSC5303DCH C5G TO-251 75pcs / Tube Note: “G” denotes Halogen Free Products Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage @ VBE=0V VCES 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 3 A Collector Peak Current (tp <5ms) ICM 6 A Base Current IB 1.5 A Base Peak Current (tp <5ms) IBM 3 A Power Total Dissipation @ TC=25ºC PDTOT 30 W Maximum Operating Junction Temperature TJ +150 oC Storage Temperature Range TSTG -55 to +150 oC Pin Definition: 1. Base 2. Collector 3. Emitter |
Ähnliche Teilenummer - TSC5303D_14 |
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Ähnliche Beschreibung - TSC5303D_14 |
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