1N4448HWT

Document number: DS30395 Rev. 10 - 2

2 of 4

www.diodes.com

September 2013

© Diodes Incorporated

1N4448HWT

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 7)

150

mW

Thermal Resistance Junction to Ambient (Note 7)

833

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Max

Unit

Test Conditions

Reverse Breakdown Voltage (Note 8)

80



V

Forward Voltage

0.62







0.72

0.855

1.0

1.25

V

Peak Reverse Current (Note 8)



100

50

30

25

nA

μA

μA

nA

Total Capacitance



3.0

pF

Reverse Recovery Time



4.0

ns

Notes:

7. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

8. Short duration pulse test used to minimize self-heating effect.

0

50

025

50

75

100

125

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Derating Curve

A

°

100

200

150

150

0.1

1

10

100

1000

0

200

400

600

800 1000 1200 1400 1600

Fig. 2 Typical Forward Characteristics

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

F

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

T = 25°C

A