Datenblatt-Suchmaschine für elektronische Bauteile |
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BC847CDLP Datenblatt(PDF) 2 Page - Diodes Incorporated |
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BC847CDLP Datenblatt(HTML) 2 Page - Diodes Incorporated |
2 / 6 page BC847CDLP Document number: DS30817 Rev. 7 - 2 2 of 6 www.diodes.com May 2013 © Diodes Incorporated BC847CDLP Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6 V Collector Current IC 100 mA Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) Total Device PD 350 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 357 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Note: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. Thermal Characteristics – Total Device 0 50 100 50 100 150 T , AMBIENT TEMPERATURE (°C) Figure 1 Power Dissipation vs. Ambient Temperature A 150 200 250 0 300 350 25 75 125 R°C/W JA = 357 Note 5 |
Ähnliche Teilenummer - BC847CDLP_15 |
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Ähnliche Beschreibung - BC847CDLP_15 |
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