LESHAN RADIO COMPANY, LTD.

S26–1/2

Silicon PIN diode

SOD523 SC-79

1

2

BAP64 – 02

2

ANODE

1

CATHODE

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

–

175

V

continuous forward current

–

100

mA

total power dissipation

–

715

mW

storage temperature

-65

+150

°C

junction temperature

-65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

0.95

1.1

V

reverse current

–

10

µA

–

1

µA

diode capacitance

0.48

–

pF

0.35

–

pF

0.23

0.35

pF

20

40

Ω

10

20

Ω

2

3.8

Ω

0.7

1.35

Ω

τ

L

charge carrier life time

1.55

–

µs

Ω;

series inductance

0.6

–

nH

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMALCHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to soldering-point

85

K/W

FEATURES

· High voltage, current controlled

· RF resistor for RF attenuators and switches

· Low diode capacitance

· Low diode forward resistance

· Very low series inductance

· For applications up to 3 GHz.

APPLICATIONS

· RF attenuators and switches.

DESCRIPTION

Planar PIN diode in a SOD523 ultra small plastic SMD package.