BCW30LT1 datasheet(5/6 Pages) LRC

Teilenummer	BCW30LT1

Bauteilbeschribung	General Purpose Transistors(PNP Silicon)

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Hersteller	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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5 / 6 page

LESHAN RADIO COMPANY, LTD.

M7–5/6

TYPICAL DYNAMIC CHARACTERISTICS

BCW29LT1 BCW30LT1

I

C , COLLECTOR CURRENT (mA)

Figure 11. Turn–On Time

I

C , COLLECTOR CURRENT (mA)

Figure 12. Turn–Off Time

I

C , COLLECTOR CURRENT (mA)

Figure 13. Current–Gain — Bandwidth Product

V

R , REVERSE VOLTAGE (VOLTS)

Figure 14. Capacitance

V

CC= 3.0 V

I

C /I B= 10

T J= 25°C

t

d @ V BE(off)= 0.5 V

t

r

V

CC= –3.0 V

I

C /I B= 10

I

B1=IB2

T J= 25°C

t

f

t

s

T

J = 25°C

5.0 V

C

ib

C

ob

T J= 25°C

500

300

200

100

70

50

30

20

10

7.0

5.0

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

1000

700

500

300

200

100

70

50

30

20

10

–1.0

–2.0 –3.0

–5.0 –7.0 –10

–20

–30

–50

–70 –100

500

300

200

100

70

50

0.5

0.7

1.0

2.0

3.0

5.0 7.0

10

20

30

50

10.0

7.0

5.0

3.0

2.0

1.0

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

V

CE=20 V

I

C , COLLECTOR CURRENT (mA)

Figure 17. Input Impedance

I

C , COLLECTOR CURRENT (mA)

Figure 18. Output Admittance

V

CE= 10 Vdc

f = 1.0 kHz

T

A = 25°C

V

CE= 10 Vdc

f = 1.0 kHz

T

A= 25°C

BCW29LT1

h

fe

200

@ I

C= -1.0 mA

20

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

100

70

50

30

20

10

7.0

5.0

3.0

2.0

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

~

BCW29LT1

h

fe

200

@ I

C= 1.0 mA

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