STBP440S datasheet(2/8 Pages) SAMHOP

Teilenummer	STBP440S

Bauteilbeschribung	Super high dense cell design for extremely low RDS(ON).

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Hersteller	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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Symbol

Min

Typ

Max

Units

BVDSS

40

V

1

IGSS

±100

nA

VGS(th)

1

V

6

gFS

40

S

VSD

CISS

1380

pF

COSS

233

pF

CRSS

215

pF

Qg

27

nC

72

nC

Qgs

65

nC

Qgd

45

tD(ON)

33.5

ns

tr

3.2

ns

tD(OFF)

12

ns

tf

ns

Gate-Drain Charge

VDS=20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=20V

ID=1A

VGS=10V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off DelayTime

VDS=20V,ID=30A,VGS=10V

Fall Time

Turn-On DelayTime

m ohm

VGS=10V , ID=30A

VDS=5V , ID=30A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

A

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body leakage current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

a

3

VGS=4.5V , ID=25A

8

8.5

11.5

m ohm

b

f=1.0MHz

b

VDS=20V,ID=30A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=10A

0.81

1.3

V

Notes

a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

b.Guaranteed by design, not subject to production testing.

c.Starting TJ=25°C,L=0.5mH,VDD=30V,VGS=10V.(See Figure13)

_

STB/P440S

Ver 1.0

www.samhop.com.tw

Apr,13,2009

2

IS

Maximum Continuous Drain-Source Diode Forward Current

10

A

2

nC

17

VDS=20V,ID=30A,VGS=4.5V

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