(SEE REVERSE SIDE)

R1

1N3595

SILICON LOW LEAKAGE DIODE

JEDEC DO-35 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high

conductance applications. Higher breakdown voltage devices are available on special order.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

150

V

Peak Working Reverse Voltage

VRWM

125

V

Average Forward Current

IO

150

mA

Forward Steady-State Current

IF

225

mA

Recurrent Peak Forward Current

if

600

mA

Peak Forward Surge Current (1.0s pulse)

IFSM

500

mA

Peak Forward Surge Current (1.0µs pulse)

IFSM

4.0

A

Power Dissipation

PD

500

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=125V

1.0

nA

IR

VR=125V, TA=125°C

500

nA

IR

VR=125V, TA=150°C

3.0

µA

IR

VR=30V, TA=125°C

300

nA

BVR

IR=100µA

150

V

VF

IF=1.0mA

0.54

0.69

V

VF

IF=5.0mA

0.62

0.77

V

VF

IF=10mA

0.65

0.80

V

VF

IF=50mA

0.75

0.88

V

VF

IF=100mA

0.79

0.92

V

VF

IF=200mA

0.83

1.0

V

CT

VR=0, f=1.0MHz

8.0

pF

trr

VR=3.5V, If=10mA, RL=1.0kΩ

3.0

µs