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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FZT957 Datenblatt(PDF) 4 Page - Diodes Incorporated |
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FZT957 Datenblatt(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page  FZT957 Datasheet Number: DS33191 Rev. 6 - 2 4 of 7 www.diodes.com March 2015 © Diodes Incorporated FZT957 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -330 -440 — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCER -330 -440 — V IC = -1µA, RB ≤ 1kΩ Collector-Emitter Breakdown Voltage (Note 10) BVCEO -300 -400 — V IC = -1mA Emitter-Base Breakdown Voltage BVEBO -7 -8 — V IE = -100µA Collector Cut-Off Current ICBO — — <1 — -50 -1 nA µA VCB = -300V VCB = -300V, TA = +100°C Collector Cut-Off Current ICER R ≤1kΩ — — <1 — -50 -1 nA µA VCB = -300V VCB = -300V, TA = +100°C Emitter Cut-Off Current IEBO — <1 -10 nA VEB = -6V DC Current Transfer Static Ratio (Note 10) hFE 100 200 - — IC = -10mA, VCE = -10V 100 200 300 IC = -0.5A, VCE = -10V 90 170 — IC = -1A, VCE = -10V — 10 — IC = -2A, VCE = -10V Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — -60 -100 mV IC = -100mA, IB = -10mA — -110 -165 IC = -500mA, IB = -100mA — -170 -240 IC = -1A, IB = -300mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — -910 -1150 mV IC = -1A, IB = -300mA Base-Emitter Turn-on Voltage (Note 10) VBE(on) — -750 -1020 mV IC = -1A, VCE = -10V Transitional Frequency (Note 10) fT — 85 — MHz IC = -100mA, VCE = -10V, f = 50MHz Output capacitance Cobo — 23 — pF VCB = -20V, f = 1MHz Switching Time tON — 108 — ns VCC = -100V, IC = -500mA, IB1 = -IB2 = -50mA tOFF — 2500 — Note: 10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. |
Ähnliche Teilenummer - FZT957_15 |
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Ähnliche Beschreibung - FZT957_15 |
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