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2N3250A Datenblatt(PDF) 1 Page - Central Semiconductor Corp

Teilenummer 2N3250A
Bauteilbeschribung  SILICON PNP TRANSISTORS
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Hersteller  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

2N3250A Datenblatt(HTML) 1 Page - Central Semiconductor Corp

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2N3250
2N3250A
2N3251
2N3251A
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3250, 2N3251
series devices are silicon PNP transistors designed for
small signal, general purpose switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
2N3250
2N3250A
SYMBOL
2N3251
2N3251A
UNITS
Collector-Base Voltage
VCBO
50
60
V
Collector-Emitter Voltage
VCEO
40
60
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
200
mA
Power Dissipation
PD
360
mW
Power Dissipation (TC=25°C)
PD
1.2
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
JC
146
°C/W
Thermal Resistance
JA
486
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEV
VCE=40V, VEB=3.0V
20
nA
BVCBO
IC=10μA (2N3250, 2N3251)
50
V
BVCBO
IC=10μA (2N3250A, 2N3251A)
60
V
BVCEO
IC=10mA (2N3250, 2N3251)
40
V
BVCEO
IC=10mA (2N3250A, 2N3251A)
60
V
BVEBO
IE=10μA
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.25
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.50
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.60
0.90
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.20
V
2N3250
2N3251
2N3250A
2N3251A
MIN
MAX
MIN
MAX
hFE
VCE=1.0V, IC=0.1mA
40
-
80
-
hFE
VCE=1.0V, IC=1.0mA
45
-
90
-
hFE
VCE=1.0V, IC=10mA
50
150
100
300
hFE
VCE=1.0V, IC=50mA
15
-
30
-
TO-18 CASE
R1 (4-March 2014)
www.centr a lsemi.com


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