2N3414_15 datasheet(1/2 Pages) CENTRAL

Teilenummer	2N3414

Bauteilbeschribung	SILICON NPN TRANSISTORS

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Hersteller	CENTRAL [Central Semiconductor Corp]

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2N3414

MPS3414

2N3415

MPS3415

2N3416

MPS3416

2N3417

MPS3417

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3414, MPS3414

series devices are silicon NPN transistors, manufactured

by the epitaxial planar process, designed for general

purpose and switching applications.

MARKING: FULL PART NUMBER

TO-92 CASE

2N3414

2N3416

2N3415

2N3417

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

MPS3414

MPS3416

SYMBOL

MPS3415

MPS3417

UNITS

Collector-Base Voltage

VCBO

25

50

V

Collector-Emitter Voltage

VCEO

25

50

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

500

mA

Power Dissipation

PD

625

mW

Power Dissipation (TC=25°C)

PD

1.5

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=Rated VCBO

100

nA

IEBO

VEB=5.0V

100

nA

BVCEO

IC=10mA (3414, 3415)

25

V

BVCEO

IC=10mA (3416, 3417)

50

V

VCE(SAT)

IC=50mA, IB=3.0mA

0.3

V

VBE(SAT)

IC=50mA, IB=3.0mA

0.85

V

hFE

VCE=4.5V, IC=2.0mA (3414, 3416)

75

225

hFE

VCE=4.5V, IC=2.0mA (3415, 3417)

180

540

hfe

VCE=4.5V, IC=2.0mA, f=1.0kHz (3414, 3416)

75

hfe

VCE=4.5V, IC=2.0mA, f=1.0kHz (3415, 3417)

180

R3 (10-September 2013)

www.centr a lsemi.com

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