2N3766_15 datasheet(1/2 Pages) CENTRAL

Teilenummer	2N3766

Bauteilbeschribung	SILICON NPN POWER TRANSISTORS

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MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N3766

2N3767

UNITS

Collector-Base Voltage

VCBO

80

100

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

4.0

A

Continuous Base Current

IB

2.0

A

Power Dissipation

PD

25

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

JC

7.0

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=Rated VCBO

10

μA

ICEV

VCE=Rated VCEO, VEB=1.5V

10

μA

ICEO

VCE=Rated VCEO

500

μA

IEBO

VEB=6.0V

500

μA

BVCEO

IC=100mA (2N3766)

60

V

BVCEO

IC=100mA (2N3767)

80

V

VCE(SAT)

IC=500mA, IB=50mA

1.0

V

VCE(SAT)

IC=1.0A, IB=100mA

2.5

V

VBE(ON)

VCE10V, IC=1.0A

1.5

V

hFE

VCE=5.0V, IC=50mA

30

hFE

VCE=5.0V, IC=500mA

40

160

hFE

VCE=10V, IC=1.0A

20

fT

VCE=10V, IC=500mA, f=10MHz

10

MHz

Cob

VCB=10V, IE=0, f=100kHz

50

pF

2N3766

2N3767

SILICON

NPN POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767

are silicon NPN power transistors manufactured by the

epitaxial base process designed for power amplifier and

medium speed switching applications.

MARKING: FULL PART NUMBER

TO-66 CASE

R2 (2-September 2014)

www.centr a lsemi.com

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